IRF630A transistor equivalent, n-channel mosfet transistor.
*This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed application.
*Drain Current
–ID=9A@ TC=25℃
*Drain Source Voltage: VDSS= 200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)
*Fast Switching Speed
*Low Drive Requirement APPLICATIONS
*This device is n-channel,.
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